feb. 2009 4 6.5 mounting holes 2?8nuts 2?4nuts e g ec g e c e cm 12.55 9.5 20.5 107 93 0.25 62 48 0.25 26 +1 ?.5 34 +1 ?.5 4 24.35 8.5 21.15 8.5 19.1 6.5 17.2 6.5 13.5 29 18 26 6.5 23 6 23 9 10 label circuit diagram tc measured point rtc CM400HU-24F application general purpose inverters & servo controls, etc mitsubishi igbt modules CM400HU-24F high power switching use ? i c ................................................................... 400a ? v ces ......................................................... 1200v ? insulated type ? 1-elements in a pack outline drawing & circuit diagram dimensions in mm
feb. 2009 2 v v w c c v rms n ?m n ?m n ?m g v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v v cc = 600v, i c = 400a, v ge = 15v v cc = 600v, i c = 400a v ge = 15v r g = 0.78 ? , inductive load i e = 400a i e = 400a, v ge = 0v igbt part fwdi part case to heat sink, thermal compound applied *2 case temperature measured point is just under the chips i c = 40ma, v ce = 10v i c = 400a, v ge = 15v v ce = 10v v ge = 0v 1200 20 400 800 400 800 1600 ?0 ~ +150 ?0 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 mitsubishi igbt modules CM400HU-24F high power switching use a a 2 80 2.4 160 6.8 4.0 300 100 600 300 350 3.2 0.078 0.09 0.045 * 3 7.8 ma a nf nc c v k/w ? 1.8 1.9 4400 23.6 0.02 0.78 6v v ns 57 ns collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time t urn-on rise time t urn-off delay time t urn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c? q r g symbol parameter v ge(th) v ce(sat) note 1. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. * 1 : case temperature (tc) measured point is indicated in outline drawing. * 2 : typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. * 3 : if you use this value, r th(f-a) should be measured just under the chips. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage t orque strength w eight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c terminals to base plate, f = 60hz, ac 1 minute main terminals m8 screw mounting m6 screw g(e) terminal m4 screw t ypical value symbol parameter collector current emitter current conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit t yp. limits min. max. maximum ratings (tj = 25 c, unless otherwise specified) electrical characteristics (tj = 25 c, unless otherwise specified) t est conditions t j = 25 c t j = 125 c
feb. 2009 3 mitsubishi igbt modules CM400HU-24F high power switching use performance curves v ge = 20v t j = 25c 15 11 10 9.5 9 8.5 8 800 500 200 600 700 400 300 100 0 0 0.5 1 1.5 2 2.5 3 3.5 4 2.5 2 1.5 0.5 1 0 0 200 400 600 800 t j = 25c t j = 125c v ge = 15v 10 1 10 2 2 3 5 7 10 3 2 3 5 7 0 0.5 1 1.5 2 2.5 3 3.5 t j = 25c 5 4 3 2 1 0 20 68 12 16 10 14 18 i c = 800a i c = 400a i c = 160a t j = 25c 10 ? 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 v ge = 0v c ies c oes c res 10 1 10 2 57 10 3 23 57 10 1 2 3 5 7 10 2 2 3 5 7 2 3 5 7 10 0 conditions: v cc = 600v v ge = 15v r g = 0.78? t j = 125c inductive load 23 t d(off) t d(on) t f t r output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) half-bridge switching characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) switching times (ns) collector current i c (a)
feb. 2009 4 mitsubishi igbt modules CM400HU-24F high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr 0 6 4 2 10 8 16 14 12 20 18 0 2000 4000 6000 1000 3000 5000 v cc = 400v v cc = 600v i c = 400a 10 1 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 single pulse t c = 25c conditions: v cc = 600v v ge = 15v r g = 0.78? t j = 25 c inductive load reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?) time (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) igbt part: per unit base = r th(j c) = 0.078k / w fwdi part: per unit base = r th(j c) = 0.09k / w reverse recovery time t rr (ns) reverse recovery current l rr (a)
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